Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

We present an analytical model for Ferro PZT Al2O3/AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This covers most operating regimes MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (ns), threshold voltage (Vth), drain current (Ids), gate capacitance (Cgs Cgd), unit gain cutoff frequency(fT) equations are presented simulated with MATLAB tool. It is observed that insertion Pb(Zr, Ti)O3 (lead zirconium titanate) material can improve device’s performance. proposed accurately predicts a higher 1.14 A/mm, high transconductance 362 S/mm, gate-to-source 50.99 pF, gate-to-drain 38.25 frequency 0.033 THz 20 nm AlGaN barrier layer. results show good agreement TCAD-Atlas simulation satisfactory different layer thicknesses. generated potential using high-power RF/Microwave applications.